The emotion simulation of the MOF-based device. (a) The schematic illustration of emotion simulation via source-drain control. (b) The energy alignment of the pentacene/2D Zn2(ZnTCPP) MOFs-PMMA structure with different VDS. (c) The current value before learning under various VDS (-3, -5, -10, -15, -20, -25 V). (d) The change of the channel conductance after 10 light spikes with various VDS. (e) The EPSC change under the 1st light spike as a function of VDS (inset, the change of the corresponding conductance). (f) The A10/A1 ratio and (g) state retention behavior under different VDS. (h) The change of EPSC after learning in 100 s with various VDS.