Figure 3. The reconfigurable short-term and long-term ion
dynamics with different ranges of stimulus at the gate terminal. a) The
rise of drain current (ΔId) induced by a chain of ten
consecutive pulses, with amplitude ranging from 1 V to 5 V, which shows
the conductance change changing from short term to long term.
ΔId triggered by pulses of different widths b) and
amplitudes c) were also conducted to evaluate the short-term ion
dynamics in the ion-modulated memtransistors. d) PPF index as a
double-exponential decay function of the interval between two pulses,
and the red line revealed the fitting results. e) Drain current
concerning different pulse frequencies from 1 Hz to 25 Hz, illustrating
that the higher stimuli generate more prominent channel current
enhancement. To explore the long-term ion dynamics, the relationship
between the final drain current of the number f) or considerable
amplitude g) of applied pulses is shown. h) Retention performance of
eight states of the memtransistor was recorded for 100 seconds. The
relative change of conductance is defined as the difference between the
initial conductance and final conductance of the device concerning the
initial conductance. i) To test the conductance maintenance capacity in
longer time scales, two of the many states were selected to perform
that. j) Fifty distinguished states were picked to show the analog
characteristic of ion-modulated memtransistor. k) Analog states update
in both potentiation and depression is shown with 50 pulses of 8 V and
-6 V, in which widths were both set at 100 ms. Data are collected from
10 cycles of the LTP and LTD updates.