Figure 4. Transmittance spectra of samples with aging test: (a)
samples aging with different structure, (b) samples aging with different
temperature, (c) samples aging in different atmosphere, (d) the
transmittance loss of samples with aging test.
Conclusions
In summary, a series of samples with structure of
Glass/SiO2/CPI and
Glass/SiO2/CPI/SiO2 were prepared and
had aging test with different temperatures (430℃, 450℃ and 470℃) and
different aging atmosphere (air and N2) to study the
influence of high temperature on the Tr% of CPI film. It was found that
the structure, aging atmosphere and aging temperature all had obvious
influence on the Tr% of samples. For the samples with structure of
Glass/SiO2/CPI/SiO2, with the increasing
of aging temperate from 430℃ to 450℃ and 470℃, the Tr% of the film
decrease obvious, especially the sample aging with 470℃ had a drop of
Tr%, and all the samples with aging all had a low Tr% than sample
without aging. Comparing with the films without aging, the loss Tr%
were 0.22%, 1.42% and 4.82% for the films aging with 430℃, 450℃ and
470℃, respectively. The sample aging in air atmosphere also got a lower
Tr% than the one aging in N2 atmosphere. When aging
with 450℃ in N2 atmosphere for 2h, the sample with
structure of Glass/SiO2/CPI/SiO2 had a
higher Tr% than sample with structure of
Glass/SiO2/CPI/SiO2, which was caused by
the increased transmission effect of SiO2 on the CPI
film. The sample with structure of Glass/SiO2/CPI had
similar principle with
Glass/SiO2/CPI/SiO2. To increase the
quality of transparent electronics device, it is worth to introduce the
CPI in the application of the preparation of device and there are at
least of three strategies to guarantee the Tr% of CPI. The relative
lower process temperature (which can meet the demand the request of ),
the inertia protection gas and increased transmission effect layer can
all guarantee the Tr% of CPI film during the preparation process of
transparent electronics device.