Figure 4. Transmittance spectra of samples with aging test: (a) samples aging with different structure, (b) samples aging with different temperature, (c) samples aging in different atmosphere, (d) the transmittance loss of samples with aging test.
Conclusions
In summary, a series of samples with structure of Glass/SiO2/CPI and Glass/SiO2/CPI/SiO2 were prepared and had aging test with different temperatures (430℃, 450℃ and 470℃) and different aging atmosphere (air and N2) to study the influence of high temperature on the Tr% of CPI film. It was found that the structure, aging atmosphere and aging temperature all had obvious influence on the Tr% of samples. For the samples with structure of Glass/SiO2/CPI/SiO2, with the increasing of aging temperate from 430℃ to 450℃ and 470℃, the Tr% of the film decrease obvious, especially the sample aging with 470℃ had a drop of Tr%, and all the samples with aging all had a low Tr% than sample without aging. Comparing with the films without aging, the loss Tr% were 0.22%, 1.42% and 4.82% for the films aging with 430℃, 450℃ and 470℃, respectively. The sample aging in air atmosphere also got a lower Tr% than the one aging in N2 atmosphere. When aging with 450℃ in N2 atmosphere for 2h, the sample with structure of Glass/SiO2/CPI/SiO2 had a higher Tr% than sample with structure of Glass/SiO2/CPI/SiO2, which was caused by the increased transmission effect of SiO2 on the CPI film. The sample with structure of Glass/SiO2/CPI had similar principle with Glass/SiO2/CPI/SiO2. To increase the quality of transparent electronics device, it is worth to introduce the CPI in the application of the preparation of device and there are at least of three strategies to guarantee the Tr% of CPI. The relative lower process temperature (which can meet the demand the request of ), the inertia protection gas and increased transmission effect layer can all guarantee the Tr% of CPI film during the preparation process of transparent electronics device.