Figure 7. Photoelectric response data was obtained using a near-IR photodetector fabricated using our graphene/Si Schottky junction. a) Photo-switching curve of the as-fabricated photodetector responding to the 1550 nm pulsed laser at a reversed bias of -1 V. The laser intensity was set at 30 mW/cm2. b) The photodetector response to an increase/decrease in the laser intensity (using a reverse bias of −1 V). c) The photodetector response towards the pulsed laser illumination with different pulse frequencies. d) Long-term stability of the photodetector response to the 1550 nm laser illumination. e-f) Expanded photo-response curve to show the rise time (tr) and fall time (tf). g) Relationship between the noise current of the photodetector and the logarithm of the pulsed frequency of the 1550 nm infrared laser.