The design and optimization of novel elliptic cylindrical TSV and its
temperature characterization
Abstract
Through Silicon Via (TSV) technology is a key technology to realize
multi-layer chips and its structure model and transmission
characteristics have attracted much attention. With the continuous
reduction of chip size, higher requirements are put forward for the
model and transmission characteristics of TSV. A novel elliptic
cylindrical TSV structure model is proposed. The influence of axial
length ratio, height, dielectric layer thickness and spacing on the
transmission characteristics of TSV are further studied by HFSS
software. The results show that the transmission of TSV is facilitated
by the decrease of axial length ratio, the decrease of height, the
increase of dielectric layer thickness and the increase of TSV spacing.
The TSV structural parameter values are optimized by a single variable
method. The optimized TSV structure is compared with the original TSV,
traditional cylindrical and conical TSV and coaxial TSV. It is concluded
that the elliptic cylindrical TSV structure has better transmission
performance. The temperature characteristics of the elliptic cylindrical
TSV are simulated. It is indicated that the transmission characteristics
of the elliptic cylindrical TSV are poor at low frequency and better at
high frequency when the temperature rises.