Transient analysis of growth/decay in materials utilizing a digital
exponential peeling method
Abstract
An algorithm is proposed to implement digital peeling to determine
dominant time constants of an exponential transient process. The method
is simpler to implement and reduces computational time to a large extent
in comparison to other techniques widely used. Apart from a synthetic
test function, the algorithm has been implemented on reported
experimental transient decay curves of Cs 2HfCl
6 (CHC) single crystal scintillation to verify its
efficacy. Finally, drain current detrapping transients of unpassivated
AlGaN/GaN high electron mobility transistors (HEMTs) are analysed to
determine the trap energy levels and concentrations. The validation of
this digital peeling technique is also carried out by comparing with
conventional method of time constant extraction from HEMT current
transients. The extracted exponentials from the transient data
efficiently fits well with the experimental data and can be extensively
used for transient analysis. The digital peeling technique has wide
applicability and can be used to analyze all exponential processes which
occur in all domains of science.