Abstract
A new temperature noise model, including the influence of
gate-drain series resistance Rgd on the noise
performance for an InP HEMT, is presented in this paper. An equivalent
temperature Tgd of Rgd has
been taken into account based on pospieszalski’s noise model. The
corresponding extraction procedure of noise parameters is given. Good
correlation between the simulated and measured noise parameters in the
frequency range of 8GHz~50GHz for a wide range of bias
points verify the validity of the improved noise model.
