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Ge-Based Graphene FET for Low-Temperature Electronics
  • +1
  • Chen Wang,
  • Weida Hong,
  • Miao Zhang,
  • Haitao Jiang
Chen Wang
Shanghai Institute of Microsystem and Information Technology
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Weida Hong
Shanghai Institute of Microsystem and Information Technology
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Miao Zhang
Shanghai Institute of Microsystem and Information Technology
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Haitao Jiang
Shanghai Institute of Microsystem and Information Technology

Corresponding Author:[email protected]

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Abstract

We reported a graphene field-effect transistor (GFET) based on CVD Ge-based graphene and primarily investigated the low-temperature electrical characteristics. The self-alignment technique was used to fabricate GFET to reduce parasitic effects and improve transconductance and cut-off frequency. To further explore the electrical properties, we studied the direct current and radio frequency characteristics of the GFET over a temperature range from 4.2 K to 300 K, considering the temperature-dependent resistivity of intrinsic Ge. The DC characteristic of the GFET for 110 nm gate length, particularly the transconductance performance, exhibits a tiny variation of only ~ 5% across this temperature range. However, the cut-off frequency experiences a considerable increase, improving several tens of times when the temperature decreases to 4.2 K, with a maximum value of 3.49 GHz. This work illustrates a meaningful advancement in applying GFETs in the lowtemperature, high-frequency domain.
21 Feb 2024Submitted to Electronics Letters
26 Feb 2024Review(s) Completed, Editorial Evaluation Pending
01 Mar 2024Reviewer(s) Assigned
24 Apr 20241st Revision Received
30 Apr 2024Submission Checks Completed
30 Apr 2024Assigned to Editor
30 Apr 2024Review(s) Completed, Editorial Evaluation Pending
27 May 20242nd Revision Received
27 May 2024Submission Checks Completed
27 May 2024Assigned to Editor
27 May 2024Review(s) Completed, Editorial Evaluation Pending