We investigated the ferroelectric properties of 10nm BaTiO ₃ (BTO) nanocubes formed by dispersing them on the surface of an Nb-doped SrTiO ₃ (Nb:STO) substrate. The microwave synthesis procedure produced BTO nanocubes with a size of approximately 10 nm, and the BTO nanocubes were dispersed in ethanol before being spin-coated on the surface of the Nb:STO substrate. From the piezoelectric d₃₃ hysteresis loops measured by a piezoresponse force microscope, it was confirmed that the 10 nm BTO nanocubes exhibited canonical ferroelectric properties. External voltages were applied to switch the polarization of the 10 nm BTO nanocubes, providing further evidence of their ferroelectric behavior. In particular, it was experimentally confirmed that the BTO nanocubes with a size of about 10 nm can be utilized as tunnel ferroelectric junction memory devices.