Modeling Single Event Transient in 28nm FDSOI MOSFETs Using a Neural
Network Approach
Abstract
It’s hard to accurately consider various operating factors for the
traditional single event transient (SET) SPICE modeling. This paper
proposes a novel method based on neural network. The proposed method can
unify the intricate data correlations among drain voltage, linear energy
transfer (LET), temperature, strike position, time, and drain transient
current in a single model with high accuracy. Technology computer aided
design (TCAD) simulation is used to get the original SET data for
training. The genetic algorithm (GA) optimized back propagation (BP)
neural network established herein has a root mean square error (RMSE) of
less than 2.0042%. This optimized neural network is converted to SET
current SPICE model through Verilog-A language and its practicality has
been verified through circuit simulation of a two-input NAND gate.