A mass conservative characteristic finite element method with
unconditional optimal convergence for semiconductor device problem
Abstract
We consider a mass conservative type method for semiconductor device
problem by employing mixed finite element method (FEM) for electric
potential equation, mass conservative characteristic FEM for both
electron and hole density equations. The boundedness of numerical
solution without certain time step restriction and optimal L^2 error
estimates of full discrete scheme are proved. Numerical experiment is
presented to verify the effectiveness and unconditional stability of the
proposed method.