Abstract
Compound/silicon heterojunction (SCH) solar cells have been widely
studied due to the low parasitic absorption of the window layer, high
short-circuit current, and simple preparation process. So far, most
reported SCH solar cells are small-area devices. By depositing MoO
x hole transport layer using hot-wire
oxidation-sublimation deposition technique and employing a front-contact
back-junction cell architecture, the large-area SCH solar cells are
successfully fabricated on M6 (166 mm) n-type silicon wafers. Indium
cerium oxide (ICO) film with the optimal thickness of about 110 nm is
inserted between MoO x and Ag. The ICO/Ag stack
functions well as a back reflector and is beneficial for increasing the
short-circuit current density, reducing the contact resistance, and
improving the device stability. A power conversion efficiency of 21.59%
is achieved on the champion SCH solar cell with the device area of
274.15 cm 2.