A 2-way combined G-band differential power amplifier (PA) designed using a 130-nm SiGe BiCMOS technology is shown in this work. A differential PA is designed at 200GHz using cascode topology (CT) resulting in an overall gain and saturated output power of >27 dB and >16.5dBm respectively. To complete the design of the 2-way combined PA, a balun was also loaded with two differential PAs which improved the bandwidth to 80GHz. The area occupied by the chip of the manufactured PA was 0.55 mm², which demonstrates a reduction of 59.25 % when compared to the existing approach. Simulation results showed that the 2-way combined G-band PA achieved a peak gain of 27dB, which showed of 4.24% increase in the gain obtained when compared with the 4-way combined PA, which was 25.9dB. Additionally, the 2-way combined G-band PA achieved a PAE value of 5.4%, which demonstrated a percentage increase of 54.2% in comparison to the 4-way combined PA, which had a PAE of 3.5%. As a result, a 3.3% decrease was observed in the DC power consumed by the 2-way combined G-band PA.