Classification of modern architectures of devices for input of analog sensor signals, as well as IP-modules of the first level of complexity, which can be made on the basis of high-temperature technologies (SiGe, SOI, GaN, SiC, GaAs), is given. It turns out that at present there are more than 250 construction variants of primary converters of analog sensor signals. They include 105 operational amplifier's modifications, 7 differential difference amplifier's modifications, 22 buffer amplifier's modifications, and also more than 100 construction variants of special active elements for signal selection tasks under the general name of "current conveyors". Priorities in realization of basic functional nodes of high-temperature interfaces based on wide-gap semiconductors (GaN, SiC, GaAs) and high-temperature platforms (SiGe, SOI) are determined.