Unlocking of Schottky Barrier near the Junction of MoS2 Heterostructure
under Electrochemical Potential
Abstract
The exploration of heterostructures composed of two-dimensional (2D)
transition metal dichalcogenide (TMDc) materials has garnered
significant research attention due to the distinctive properties of each
individual component and their phase-dependent unique properties. Using
the plasma-enhanced chemical vapor deposition (PECVD) method, we analyze
the fabrication of heterostructures consisting of two phases of
molybdenum disulfide (MoS2) in four different cases. The initial
hydrogen evolution reaction (HER) polarization curve indicates that the
activity of the heterostructure MoS2 is consistent with that of the
underlying MoS2, rather than the surface activity of the upper MoS2.
This behavior can be attributed to an energy barrier arising from the
physical contact resistance between the two different phases of MoS2
layers, which is mediated by van der Waals bonds. Remarkably, the energy
barrier at the junction dissipates upon reaching a certain
electrochemical potential, indicating surface activation from the top
phase of MoS2 in the heterostructure. Notably, the 1T/2H MoS2
heterostructure demonstrates enhanced electrochemical stability compared
to its metastable 1T-MoS2. This fundamental understanding paves the way
for the creation of phase-controllable heterostructures through an
experimentally viable PECVD, offering significant promise for a wide
range of applications.