Input-Output Waveform Engineered Inverse Class F Power Amplifiers With
High-Efficiency
Abstract
This paper studies the influence of the gate voltage of the
power amplifier (PA) on the drain current and efficiency. This study
proposes a theory of controlling input non-linearity to improve the
efficiency of PAs. The theoretical efficiency of the inverse Class F PA
which controlling input non-linearity is from 77 to 97%. A new design
method for the inverse Class F PA that reconstructs the design of the
load admittance space into a region instead of a point. To verify the
validity of the proposed theory, a inverse Class F PA is designed and
fabricated using a commercial 10W GaN high electron mobility transistor
(HEMT). Results of the measurement show a high drain efficiency (DE) of
78.5%, a output power of 41.6 dBm and a large signal gain of 12.1 dB at
1.5 GHz. The overall PA’s size is controlled at 80*50 m m 2 .
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