Transition metal dichalocogenide bilayers provide scaling opportunities for CMOS technology. They also lead to versatile vertical stacking that can achieve powerful tensor cores for advanced processors. The quantum wire uniformity of edge atomic positions becomes crucial to achieving tunable and controllable quantum conduction in angstrom-scale vertically integrated MOSFETs (VIMOSFETs). Advanced complex scalable VLSI/Versatile Logic memory integration (VLMI) hierarchies require strong quantization control and tuning. The photon-phonon complexities are relevant in petahertz digital switching.