We detail the generation of a pulsed atomic oxygen (AO) broad beam with a high flux-density via collision-induced dissociation of O₂ to support practical industrial exploitation of AOs, particularly for facilitating 2-dimenstional oxidation/etching at a fast rate of one-monolayer per second in an area ≥1000cm². This innovation fuses the following interdisciplinary concepts: (a) a high density of O⁺ can be produced in an electron-cyclotron-resonance (ECR) O₂ plasma; (b) O⁺ can be extracted and accelerated with an aperture-electrode in the plasma; (c) O⁺ with adequate kinetic energy can initiate a cascade of gas-phase collisions in the presence of O₂; (d) collision-induced dissociation of O₂ yields AOs with adequate kinetic energy which can cause additional collision-induced dissociation of O₂. Computational simulations of such collisions, with both ab initio molecular dynamics and direct simulation Monte Carlo methods, are used to guide the experimental generation of the proposed AO-beam. We experimentally demonstrate the highest known AO mean flux-density of about 1.5×10¹⁶ atoms cm^-2 s^-1 in a broad-beam, and use it to oxidatively modify a self-assembled molecular layer of siloxane on a silicon wafer. In addition, we also demonstrate the growth of Al₂O₃ through an AO-assisted atomic layer deposition process at a room temperature.