The assessment of neutron-induced displacement effects in electronic components is a subject combining many aspects. First of all, the material of the electronic component is an important element. In addition, the physics of neutron interactions varies depending on the energy domain. Displacement cross sections are usually estimated using two main methods based on either displacement energy or displacement number. Notably, neutron testing standards for electronics use displacement energy. Numerical modelling, which describes matter very precisely, uses mainly the number of defects. In this work, we propose to establish a link between the two displacement cross-sections. Geant4 is used for the statistical treatment of neutron transfer in secondary ion populations. The Iradina tool is then run for each event to translate each secondary ion trajectory into a displacement number. Classically, an analytical method is used to convert ion populations into displacement energies. In our case, a Monte Carlo approach is applied from the incident neutron to the defects. Components in Si and GaAs technology have been the most extensively used and studied. GaN and S iC technologies are also good candidates. Thus, these four materials are studied. Various di splacement characteristics are given. Finally, equivalence factors for the neutron spectra used for testing are proposed.