The primary technological goal of a laser diode is achieving effective light amplification for optimal performance. This paper explores the fundamental mechanisms of the basic heterojunction laser diode, and the advancements in laser diode design using an advanced semiconductor alloy, AlGaN. The paper also examines promising technology of Ultraviolet (UV) in the field of medical, industrial and engineering. Various fabrication techniques on this diode that enhance structural quality, including thicker material layers, uniform growth, and high-quality crystals achieved via epitaxial processes were discussed. These improvements result in superior laser efficiency, stability, and performance, contributing to the development of more powerful and reliable laser diodes suited for various industrial and scientific applications.