This study explores the influence of both laser spot size and sizing threshold in Surface Scanning Inspection Systems (SSIS) on cluster identification. Reducing the laser spot size enables the detection and differentiation of smaller point defects while simultaneously limiting the specified search distance, collectively influencing cluster identification. A smaller sizing threshold introduces more point defects, enhancing the likelihood of cluster identification. However, this also leads to a shift between clusters and scratches, as well as cluster merging, ultimately resulting in a decrease in the overall quantity of clusters.

Abstract- For the miniaturization of the structures of semiconductor device fabrication, high uniformity of side-flatness and edge roll-off of 300 mm wafers are required. In this study, the formation of light point defects (LPDs) on silicon (Si) wafer surface due to an edge gripper handling system was investigated. The relationships between the generation of LPDs with respect to flatness, edge profile, and edge roll-off of Si wafers were analyzed. It was found that the variation of traditionfacet parameters and near-edge geometry metric, such as edge site frontsurface-referenced least squares/range (ESFQR), have no impact on the formation of surface LPDs. By contrast, the performance of Z-height double derivative (ZDD), allowed an accurate prediction of formation of surface LPDs. Additionly, for a 300mm silicon wafer, the surface LPDs occurred with frontside ZDD obtained at a radius of 149.2 mm, ranging above -954 nm/mm2 . The surface was LPDs free when ZDD was below -1235 nm/mm2 . Surface LPD formation occurred randomly and was not predictable when ZDD ranged from -954 nm/mm2 to -1235 nm/mm2 . The result indicates that the LPDs caused by wafer handling is proportional to the performance of ZDD at the edge roll-off area of silicon wafer, this is consistent with the requirement of edge roll-off considering wafer geometry.

Surface light point defects (LPD) formation caused by edge gripper handling of silicon wafers was investigated. By relating the observed light point defects (LPD) density to flatness and edge profile measurement it is found that the variation of traditional facet parameters and near-edge geometry metric such as edge site front surface referenced least-square fit range (ESFQR) have no impact on whether surface LPD are generated or not, while the value of Z-height Double Derivative (ZDD), a metric for surface curvature, allows an efficient predication for the formation of surface LPD. Particularly, surface LPD are found to occur with frontside ZDD, taken at a radius of 149.2 mm, ranging from -500 nm/mm2 and -800 nm/mm2 , The surface is found to be LPD free when ZDD is below -1200 nm/mm2 . Surface LPD formation occurs randomly and therefore is inapplicable to predict when ZDD ranges -800 nm/mm2 and -1200 nm/mm2 .

Our aim is to develop next generation of MEMS (microelectromechanical systems) devices that are composed Ni-Mn-Ga and silicon layers. Due to the large magnetic-field-induced strains of Ni-Mn-Ga, actuating components can be fabricated in the Ni-Mn-Ga layers. Other functional components can be manufactured in the silicon layer. Single crystalline Ni-Mn-Ga alloys that are grown by using the Bridgman vertical growth technique have thus far obtained the largest magnetic field-induced strain (MFIS), a magnetic shape memory (MSM) effect. Similar to silicon wafers, Ni-Mn-Ga wafers are also sliced from crystal-oriented single crystalline ingots. To fabricate hybrid MEMS devices such as micromanipulators and robots, lab-on-chip containing micropump manifolds and valves, or vibration energy harvesters, the fabrication processes used for MEMS devices will be used are also be used to fabricate components in the Ni-Mn-Ga layer of the hybrid MEMS devices. One of the most important processes for MEMS fabrication is the structuring of materials by chemical etching. The main goal of this study is to obtain evidence that the etchant etches silicon but not Ni-Mn-Ga and to identify an etchant that etches Ni-Mn-Ga but not silicon. The present paper reports on a novel experiment in dissolving Ni-Mn-Ga alloys. An etchant composition of 69% HNO3, 98% H2SO4, and CuSO4•5H2O is proposed for dissolving Ni-Mn?Ga alloys and the variation in the dissolution rate by adjusting the concentrations of HNO3 and ultrapure water (UPW) is demonstrated. This etchant was demonstrated to etch Ni-Mn-Ga but not silicon. The HF+HNO3 acidic solution commonly used for etching silicon does not dissolve Ni-Mn-Ga